1. features vds= 30v rds(on), vgs@4.5v, ids@5a = 52m rds(on), vgs@10v, ids@6a = 38m we declare that the material of product compliance with rohs requirements and halogen free. s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. 2. applications high density cell design for ultra low on-resistance advanced trench process technology high power and current handling capability 3. device marking and ordering information 4. maximum ratings(ta = 25oc) C continuous ta = 25c C pulsed(note 1) 5. thermal characteristics maximum power dissipation thermal resistance, junctionCtoCambient(note 2) junction and storage temperature 1. repetitive rating: pulse width limited by the maximum junction temperation. 2. 1-in2 2oz cu pcb board. ln4812lt1g S-LN4812LT1G 30v n-channel enhancement-mode mosfet 30 unit drainCsource voltage vdss marking shipping ln4812lt1g n48 3000/tape&reel drain current v v a unit 1.4 id 6 idm 30 tj,tstg rja 90 device gateCtoCsource voltage C continuous vgs 20 ln4812lt3g n48 10000/tape&reel parameter symbol limits parameter symbol limits w pd ?55 +150 oc/w o c sot23(to - 236) leshan radio company, ltd. 1/5 rev.e oct. 2018
ln4812lt1g, S-LN4812LT1G 30v n-channel enhancement-mode mosfet 6. electrical characteristics (ta= 25 oc ) off characteristics characteristic drainCsource breakdown voltage (vgs = 0, id = 250adc) zero gate voltage drain current (vds=24v, vgs=0v) gateCbody leakage current, forward (vds = 0 v, vgs = 20 v) gateCbody leakage current, reverse (vds = 0 v, vgs = -20 v) forward transconductance (vds=5v, id=6.9a) on characteristics (note 3) gate threshold voltage (vds = vgs, id = 250adc) static drainCsource onCstate resistance (vgs = 10 v, id = 6 a) (vgs = 4.5 v, id = 5 a) dynamic characteristics input capacitance (vgs = 0 v, f = 1.0mhz,vds= 15 v) output capacitance (vgs = 0 v, f = 1.0mhz,vds= 15 v) reverse transfer capacitance (vgs = 0 v, f = 1.0mhz,vds= 15 v) switching characteristics turn-on delay time rise time turn-off delay time fall time sourceCdrain diode characteristics forward voltage (vgs = 0 vdc, isd = 1 adc) max.diode forward current 3.pulse test: pulse width 300 s, duty cycle 2.0%. - - 1.3 tf vgs(th) vdc 3.0 35 - 22 38 ns - 77 - m 55 1.5 - vsd v - - unit vdc igssf - - 100 pf pf pf gfs s - 15.4 - ciss - 610 - coss crss - 100 v(br)dss idss - - 1 adc nadc nadc typ. max. igssr - - -100 30 - - 3 is a (vdd = 15v, rl =15, d = 1, vgen = 10v rg = 6 ) - 30 - - 5 - - 9 - td(on) tr td(off) - 14 - rds(on) - 1.0 symbol min. leshan radio company, ltd. 2/5 rev.e oct. 2018
ln4812lt1g, S-LN4812LT1G 30v n-channel enhancement-mode mosfet 7 . electrical characteristics curves 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -55 -5 45 95 145 195 vgs(th)(normallized) t,temperature( ) id=250ua 0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4 5 id, drain current (a) vds, drain - to - source voltage (v) vgs=4v vgs=3v vgs=3.5v 0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4 5 id,drain current(a) vgs,gate - to - source voltage(v) vds=6v 150 25 - 55 on - region characteristics transfer characteristics vgs(th) vs. temperature leshan radio company, ltd. 3/5 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 id(a) vgs=4v vgs=10v vgs=4.5v ta=25 rds(on) vs. id rdson() rev.e oct. 2018
ln4812lt1g, S-LN4812LT1G 30v n-channel enhancement-mode mosfet 7 . electrical characteristics curves con. leshan radio company, ltd. 4/5 0.00 0.05 0.10 0.15 0.20 2 4 6 8 10 rdson() vgs(v) 150 - 55 25 id=5.0a rds(on) vs. vgs rev.e oct. 2018
ln4812lt1g, S-LN4812LT1G 30v n-channel enhancement-mode mosfet 8.outline and dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions or gate burrs. 9.soldering footprint d dim millimeters inches 0.89 1 c 2.80 max a 0.015 0.018 0.02 0.13 0.18 0.003 b a1 0.044 3.04 0.01 e min nom max min nom 1.20 0.09 1.11 0.035 0.04 0.11 0.37 0.06 0.114 0.005 0.004 0.44 0.5 2.9 0.012 0.35 0.54 0.021 0.029 0.007 0.1 0.001 0.002 0.12 1.3 1.4 0.047 0.051 0.055 0.081 h e 2.10 2.4 2.64 0.083 0.094 0.104 0 --- 10 0 --- 10 e l l1 0.10 0.2 0.3 0.004 0.008 0.075 0.69 0.014 1.78 1.9 2.04 0.07 leshan radio company, ltd. 5/5 rev.e oct. 2018
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